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Manufacturer Part Number: HGT1S10N120BNST
Our Part Number:

IC-HGT1S10N120BNST

Product Category: IGBT Transistors
Manufacturer / Brand: ON Semiconductor
Brief Description: IGBT 1200V 35A 298W TO263AB
Datasheet Download: HGT1S10N120BNST pdf datasheetHGT1S10N120BNST.pdf
Package Type: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity Available: 44040 Pieces
Unit Price: Quote by Email: sales@ic-chips.com
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
Delivery Time: 1-2 Days
Date Code (D/C): New
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Manufacturer Part Number : HGT1S10N120BNST
Our Part Number : IC-HGT1S10N120BNST
Manufacturer : ON Semiconductor
Description : IGBT 1200V 35A 298W TO263AB
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 35A
Current - Collector Pulsed (Icm) : 80A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
Power - Max : 298W
Switching Energy : 320μJ (on), 800μJ (off)
Input Type : Standard
Gate Charge : 100nC
Td (on/off) @ 25°C : 23ns/165ns
Test Condition : 960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : TO-263AB
Other Part Number : HGT1S10N120BNSTTR-ND
Delivery Time : Ship within 1 day.
Manufacturer Production time : 6-8 weeks
Weight : 0.2151 KG
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