| Manufacturer Part Number : |
APTM100A13DG |
| Our Part Number : |
IC-APTM100A13DG |
| Manufacturer : |
Microsemi Corporation |
| Description : |
MOSFET 2N-CH 1000V 65A SP6 |
| Packaging : |
Bulk |
| Series : |
- |
| Part Status : |
Active |
| FET Type : |
2 N-Channel (Half Bridge) |
| Technology : |
- |
| Drain to Source Voltage (Vdss) : |
1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C : |
65A |
| Drive Voltage (Max Rds On, Min Rds On) : |
- |
| Vgs(th) (Max) @ Id : |
5V @ 6mA |
| Gate Charge (Qg) (Max) @ Vgs : |
562nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds : |
15200pF @ 25V |
| Vgs (Max) : |
- |
| FET Feature : |
Standard |
| Power Dissipation (Max) : |
1250W |
| Rds On (Max) @ Id, Vgs : |
156 mOhm @ 32.5A, 10V |
| Operating Temperature : |
-40°C ~ 150°C (TJ) |
| Mounting Type : |
Chassis Mount |
| Supplier Device Package : |
SP6 |
| Package / Case : |
SP6 |
| Other Part Number : |
APTM100A13DG-ND |
| Delivery Time : |
Ship within 1 day. |
| Manufacturer Production time : |
6-8 weeks |
| Weight : |
0.29002 KG |
APTM100A13DG.pdf
