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Manufacturer Part Number: IPG16N10S4L61AATMA1
Our Part Number:

IC-IPG16N10S4L61AATMA1

Product Category: MOSFETs
Manufacturer / Brand: Infineon Technologies
Brief Description: MOSFET 2N-CH 8TDSON
Datasheet Download: IPG16N10S4L61AATMA1 pdf datasheetIPG16N10S4L61AATMA1.pdf
Package Type: PG-TDSON-8-10
Quantity Available: 66450 Pieces
Unit Price: Quote by Email: sales@ic-chips.com
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
Delivery Time: 1-2 Days
Date Code (D/C): New
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Manufacturer Part Number : IPG16N10S4L61AATMA1
Our Part Number : IC-IPG16N10S4L61AATMA1
Manufacturer : Infineon Technologies
Description : MOSFET 2N-CH 8TDSON
Packaging : Tape & Reel (TR)
Series : Automotive, AEC-Q101, OptiMOS?
Part Status : Active
FET Type : 2 N-Channel (Dual)
Technology : -
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 16A
Drive Voltage (Max Rds On, Min Rds On) : -
Vgs(th) (Max) @ Id : 2.1V @ 90μA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 845pF @ 25V
Vgs (Max) : -
FET Feature : Logic Level Gate
Power Dissipation (Max) : 29W
Rds On (Max) @ Id, Vgs : 61 mOhm @ 16A, 10V
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-PowerVDFN
Package / Case : PG-TDSON-8-10
Other Part Number : IPG16N10S4L61AATMA1-ND
Delivery Time : Ship within 1 day.
Manufacturer Production time : 6-8 weeks
Weight : 0.28522 KG
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