| Manufacturer Part Number : |
IRFHM8363TR2PBF |
| Our Part Number : |
IC-IRFHM8363TR2PBF |
| Manufacturer : |
Infineon Technologies |
| Description : |
MOSFET 2N-CH 30V 11A 8PQFN |
| Packaging : |
Cut Tape (CT) |
| Series : |
HEXFET? |
| Part Status : |
Obsolete |
| FET Type : |
2 N-Channel (Dual) |
| Technology : |
- |
| Drain to Source Voltage (Vdss) : |
30V |
| Current - Continuous Drain (Id) @ 25°C : |
11A |
| Drive Voltage (Max Rds On, Min Rds On) : |
- |
| Vgs(th) (Max) @ Id : |
2.35V @ 25μA |
| Gate Charge (Qg) (Max) @ Vgs : |
15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds : |
1165pF @ 10V |
| Vgs (Max) : |
- |
| FET Feature : |
Logic Level Gate |
| Power Dissipation (Max) : |
2.7W |
| Rds On (Max) @ Id, Vgs : |
14.9 mOhm @ 10A, 10V |
| Operating Temperature : |
-55°C ~ 150°C (TJ) |
| Mounting Type : |
Surface Mount |
| Supplier Device Package : |
8-PowerVDFN |
| Package / Case : |
8-PQFN (3.3x3.3), Power33 |
| Other Part Number : |
IRFHM8363TR2PBFCT-ND |
| Delivery Time : |
Ship within 1 day. |
| Manufacturer Production time : |
6-8 weeks |
| Weight : |
0.28750 KG |
IRFHM8363TR2PBF.pdf
