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Manufacturer Part Number: PTAB182002TCV2R250XTMA1
Our Part Number:

IC-PTAB182002TCV2R250XTMA1

Product Category: MOSFETs
Manufacturer / Brand: Infineon Technologies
Brief Description: IC RF FET LDMOS 190W H-49248H-4
Datasheet Download: PTAB182002TCV2R250XTMA1 pdf datasheetPTAB182002TCV2R250XTMA1.pdf
Package Type: H-49248H-4
Quantity Available: 83850 Pieces
Unit Price: Quote by Email: sales@ic-chips.com
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
Delivery Time: 1-2 Days
Date Code (D/C): New
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Manufacturer Part Number : PTAB182002TCV2R250XTMA1
Our Part Number : IC-PTAB182002TCV2R250XTMA1
Manufacturer : Infineon Technologies
Description : IC RF FET LDMOS 190W H-49248H-4
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : LDMOS
Technology : 65V
Drain to Source Voltage (Vdss) : 28V
Current - Continuous Drain (Id) @ 25°C : 10μA
Drive Voltage (Max Rds On, Min Rds On) : -
Vgs(th) (Max) @ Id : 520mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : -
Vgs (Max) : -
FET Feature : -
Power Dissipation (Max) : 29W
Rds On (Max) @ Id, Vgs : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : H-49248H-4
Package / Case : H-49248H-4
Other Part Number : PTAB182002TCV2R250XTMA1-ND
Delivery Time : Ship within 1 day.
Manufacturer Production time : 6-8 weeks
Weight : 0.32299 KG
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