| Manufacturer Part Number : |
SIZ998DT-T1-GE3 |
| Our Part Number : |
IC-SIZ998DT-T1-GE3 |
| Manufacturer : |
Vishay Siliconix |
| Description : |
MOSFET 2 N-CH 30V 8-POWERPAIR |
| Packaging : |
Tape & Reel (TR) |
| Series : |
TrenchFET? |
| Part Status : |
Active |
| FET Type : |
2 N-Channel (Dual), Schottky |
| Technology : |
- |
| Drain to Source Voltage (Vdss) : |
30V |
| Current - Continuous Drain (Id) @ 25°C : |
20A (Tc), 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) : |
- |
| Vgs(th) (Max) @ Id : |
2.2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs : |
8.1nC @ 4.5V, 19.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds : |
930pF @ 15V, 2620pF @ 15V |
| Vgs (Max) : |
- |
| FET Feature : |
Standard |
| Power Dissipation (Max) : |
20.2W, 32.9W |
| Rds On (Max) @ Id, Vgs : |
6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V |
| Operating Temperature : |
-55°C ~ 150°C (TJ) |
| Mounting Type : |
Surface Mount |
| Supplier Device Package : |
8-PowerWDFN |
| Package / Case : |
8-PowerPair? |
| Other Part Number : |
SIZ998DT-T1-GE3-ND |
| Delivery Time : |
Ship within 1 day. |
| Manufacturer Production time : |
6-8 weeks |
| Weight : |
0.30658 KG |
SIZ998DT-T1-GE3.pdf
